FDP085N10A datasheet, mosfet equivalent, ON Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 3.93MB)

Features and benefits

* RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
* Fast Switching Speed
* Low Gate Charge, QG = 31 nC (Typ.)
* High Performance Trench Technology for Ex.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.

Description

This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification for ATX / Server.

Image gallery